• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    It comprises a rotating element (1) in which a beam (B) of electromagnetic radiation can impinge. The rotating element comprises a single piece (1) based on a main material that includes a first surface (2) on which the beam (B) and a second surface (3) in which the beam (B) can strike can impact). after impingement on the first surface (2), each surface (2, 3) comprising a zone (2a, 3a) of main material and a zone (2b, 3b) of multi-layer material arranged adjacent to said surface. The axis (A) of rotation of said piece (1) is arranged at a distance (I) of separation of the first surface (2). (Machine-translation by Google Translate, not legally binding)
    公开号:ES2686770A1
    申请号:ES201830474
    申请日:2018-05-18
    公开日:2018-10-19
    发明作者:Nahikari GONZÁLEZ MARTÍNEZ DE LAPERA；Judith JUANHUIX GIBERT
    申请人:Consorci per a la Construccio Equipament i Explotacio del Laboratori de Llum Sincrotro；
    IPC主号:
    专利说明:

    DESCRIPTION

    Monochromator device

    Object of the invention 5

    The present invention relates to a monochromator device.

    Background of the invention
     10
    A monochromator is a device that allows you to select a monochromatic electromagnetic radiation, that is, with a single wavelength, from a broad-spectrum radiation.

    Monochromators allow obtaining monochromatic electromagnetic radiation with certain characteristics (energy, bandwidth) that are adapted to the needs of the experiments or measurements that are performed on samples of interest.

    One type of existing monochromator, called double crystal monochromator, allows to obtain monochromatic radiation, generally in the area of the electromagnetic spectrum of the X-rays, by successive diffraction of a beam of electromagnetic radiation on the polished surface of two crystals. The nature of the crystal and the adjustment of the angle of incidence of the beam with respect to the corresponding diffraction plane (also called Bragg angle) allow obtaining a monochromatic output beam with properties adaptable to the needs of the measurement to be performed. The most commonly used crystal material is silicon. The properties of the monochromatic beam that are selected for the measurements are the wavelength (or energy), the spectral bandwidth and the photon flow. The smooth operation of the double crystal monochromator depends largely on the parallelism between the two surfaces of the two crystals.
     30
    A monochromator of this type, known as 'Channel cut', comprises a single piece, for example, made of silicon crystal, which can rotate around an axis in order to modify the angle of incidence of a beam on two diffraction surfaces. of the crystal and, thus, the properties of the monochromatic beam obtained.
     35
    There are also monochromators that, applying the same principle, use two multi-layer materials instead of crystals. These multi-layer materials are normally composed of two types of materials: a heavy metal (W, Mo, Rh, Pd, etc.) and a lighter material (Si, C, B4C, etc.). The selection of the materials, the structure and number of the layers and the angle of incidence (or Bragg angle) allow to select the wavelength (or energy) 5 within the range of the X-rays, the spectral bandwidth and the photon flow Likewise, the proper functioning of this double multi-layer monochromator depends largely on the parallelism between the two surfaces of the two multi-layers.

    Within these monochromators, there is a particular type, known as dual monochromator 10, which comprises two pairs of crystals to diffract the beam, as well as various pieces of connection between them. These monochromators allow diffraction of a beam of electromagnetic radiation using one or another material in order to obtain a monochromatic beam with different characteristics.
     fifteen
    An example of this type of monochromator can be found in the Journal of Synchrotron Radiation (2009), Vol. 16, p. 97-104, " A dedicated small-angle X-ray scattering beamline with a superconducting wiggler source at the NSRRC ”, which describes a dual monochromator system (section 3.2, Fig. 4 (a)) comprising a rotating structure that includes two pieces of silicon crystal (Si (111)) and two pieces of a multi-20 layer material (alternate layers of Mo and B4C). The structure described revolves around an axis of rotation (Bragg axis) that passes through the center of the outer surface of one of the pieces of silicon crystal in which a beam of electromagnetic radiation strikes. That is, the Bragg axis is included in the plane of the surface of the silicon crystal on which the beam strikes for the first time. The Bragg axis is perpendicular to the incident beam. 25

    By rotating the structure around its Bragg axis, the incident beam is diffracted into the two pieces of silicon (with angles of incidence or Bragg from 4.9 to 23 °) or on the surface of the two pieces of multi- material layer (with angles of incidence of 0.9 to 2.4 °) to obtain a beam of monochromatic electromagnetic radiation with corresponding characteristics (e.g., the multi-layer material can allow to obtain X-rays of 15 keV with a angle of incidence of 0.9 ° and 6 keV with an angle of incidence of 2.4 °, and the silicon crystal can allow to obtain x-rays of 23 keV with an angle of incidence of 4.9 ° and 5 keV with an angle of incidence of 23 °).
     35
    So that the radiation diffracted by the first crystal or multi-layer is also diffracted in the second and there is a radiation flow it is necessary to arrange the diffraction planes of the two parallel diffraction surfaces between them. In addition, this is necessary so that the output beam has the same direction regardless of the Bragg angle and alignment of the rear optics is possible. While this strict condition of parallelism between the 5 diffraction planes (Bragg planes) of the two diffractions is essential, this complicates the overall structure of the monochromator since it involves the use of several components (silicon pieces, multi-layer material and a support structure of the pieces), thus complicating its production, geometry and dimensional accuracy. Also, the fact that the two diffraction surfaces are not in the same piece or block of glass complicates the thermal conductivity between them and that they can have a similar temperature. This is an important requirement, since the thermal deformation of the surfaces alters its diffraction conditions. Finally, the introduction of parts and adjustments between surfaces impairs the behavior of the monochromator vibrations, making the beam less stable. This fact is particularly relevant in small electromagnetic radiation beams 15 and in particular in experimental micro-focus stations.

    Other monochromators allow diffraction of a beam of electromagnetic radiation into two different materials by introducing two pairs of independently installed materials. The selection of the material is carried out by the movement of the corresponding support structure and, therefore, the monochromator requires additional stages or movement mechanisms to adjust the relative position between said parts and to arrange the monochromator in the desired position with respect to to the beam of electromagnetic radiation. The use of additional stages or mechanisms of movement and different parts also complicates the overall structure of the monochromator and hinders its production, precision and cooling, also increasing the presence of vibrations that can affect the stability of the beam produced.

    Description of the invention
     30
    The objective of the present invention is to solve the drawbacks of the devices known in the art, by providing a monochromator device comprising a rotating element in which a beam of electromagnetic radiation can influence, characterized by the fact that the rotating element comprises a single piece based on a main material that includes a first surface on which 35
    the beam and a second surface can be affected on which said beam can impact after the first surface has an impact, each surface comprising a zone of main material and a zone of multi-layer material arranged adjacently on said surface, and by the fact that the axis of rotation of said piece is arranged at a distance of separation from the first surface. 5

    Preferably, the first surface and the second surface are parallel to each other.

    Advantageously, the multi-layer material comprises alternating superimposed layers of different materials deposited on the first and second surfaces of the piece 10 based on a main material and parallel with respect to a plane defined by the corresponding surface.

    Thanks to these characteristics, the present invention allows obtaining a monochromator with a very simple structure and operation and with two modes of operation (one with silicon, the other with the multilayer material). In practice, this is equivalent to having 2 different monochromators based on 2 different materials without introducing any additional mechanism.

    The use of a single integral piece, preferably based on silicon glass, comprising two flat diffraction surfaces comprising two materials (preferably silicon glass 20 and multi-layer material) each allows to greatly simplify the structure of the monochromator. This is possible thanks to the arrangement of the axis of rotation of the displaced piece with respect to the first surface (preferably, below it). In this way, the piece must only rotate around its axis of rotation so that the beam is diffracted by the desired material (by two surfaces of silicon glass or by two surfaces of multi-layer material) and in the range of angles more convenient, without additional parts or stages of movement that would complicate the structure of the device. A monochromatic beam with a wide range of properties is thus obtained by means of a single piece and a single movement (rotation) of said piece.
     30
    On each of the surfaces of this new monochromator there are two adjacent diffraction zones. In one area the beam is diffracted on the silicon crystal, while in the other it is diffracted on a multi-layer material grown in that region. The Bragg (diffraction) planes of the silicon crystal zones and the multi-layer material zones of the two surfaces have to be parallel. The beam is diffracted in one area or another 35
    depending on the angle of incidence (angle of Bragg), since the axis of Bragg or rotation is not in the same plane as any of the surfaces and, therefore, the footprint of the beam on them moves according to the angle of Bragg.

    Therefore, it is possible to obtain a piece that simplifies the geometry and complexity of the monochromator device, facilitating and reducing its production and improving its operation.

    Brief description of the drawings
     10
    In order to facilitate the description of what has been set forth above, some drawings are attached in which, schematically and only by way of non-limiting example, a practical case of embodiment of the device of the invention is represented, in which:

    Fig. 1 is a top perspective view of the device of the present invention; fifteen

    Fig. 2 is a bottom perspective view of the device of the present invention;

    Fig. 3 is a side elevation view of the device of the present invention;
     twenty
    Fig. 4 is a detail view, in longitudinal section, of the device of the invention, showing the axis of rotation of the device of the invention and the surrounding area, with a beam of electromagnetic radiation affecting the device; Y

    Figs. 5 to 8 are schematic views showing the diffraction of a beam of electromagnetic radiation in the device of the invention with different angles of inclination or rotation of said device.

    Description of a preferred embodiment
     30
    As can be seen in Figs. 1 to 3, the monochromator device of the present invention comprises a rotating element or part 1. The body of the piece 1 is unitary and is based on silicon crystal, carved on the surfaces where a beam can influence according to a specific reflection, generally Yes (111), although it could also be based on other material (Ge, etc.) and / or use other reflections (311, 220, etc.). In this report, for 35
    'based on' a material means that a part or component is made substantially integral to said material, although it may comprise some other added material incorporated in said part or component, without said added material comprising a separate part or component before or after said incorporation.
     5
    The piece 1 comprises two halves or blocks joined together in the intermediate zone of the piece 1 and extending in a parallel direction (axis L) and opposite from the central zone in which they are joined. A first block defines a first flat surface 2 and a second block defines a second flat surface 3. The first surface 2 and the second surface 3 are parallel to each other and are separated by a distance d (see Fig. 3) in perpendicular direction 10 with respect to the planes that comprise each surface 2, 3.

    As can be seen in Figs. 1 and 2, each surface 2, 3 comprises two zones made of a different material. The first surface 2 comprises a zone 2a made of the material in which part 1 (silicon crystal) is made and a zone 2b made of a multi-layer coating material 15. Here, "multi-layer material" means any suitable combination of materials deposited on a substrate (in this case, the silicon crystal on which part 1 is based) by some deposition process, preferably sputtering (magnetron sputtering), so that the multi-layer material is disposed on a surface of the substrate forming alternating layers of two or more different materials arranged in a parallel plane with respect to said surface up to a certain height in said substrate (see also Figs. 4 to 8), typically of the order of micrometers. The multi-layer material may consist of alternating layers of W / B4C, Ru / B4C, W / Si, Mo / B4C, Pd / B4C or other suitable materials according to the specific needs of each case. 25

    As shown in the figures, the silicon crystal zone 2a and the zone 2b comprising a coating of multi-layer material are adjacent and coplanar to each other and with respect to the first surface 2. Zone 2b of multi-material The layer is shaped in the present embodiment as a strip extending in the L direction, which essentially coincides with the longitudinal extension direction of the piece 1.

    Similarly to the first surface 2, the second surface 3 also comprises a zone 3a made of silicon crystal and a zone 3b made of the same coplanar and adjacent multi-layer material. 35
    The surfaces 2, 3 and the corresponding zones 2a, 2b, 3a, 3b are aligned along the L direction. It can be seen that the silicon crystal zones 2a, 3a comprise the entire first and second surfaces 2, 3 , with the exception of the zone occupied by zone 2b, 3b of multi-layer material. Also, in plan views, the two zones or strips 2b, 3b of multi-layer material are arranged at a certain distance of separation in the L direction and the two zones 2a, 3a of silicon glass are arranged with a certain degree of overlap ( one over the other, separated by distance d) in the same direction L.

    Referring also to Fig. 4, in which an enlarged detail of a longitudinal section of the central area of the piece 1 in which the two halves or 10 blocks of said piece 1 and of the two surfaces 2 can be observed , 3 corresponding, the A axis of rotation of the Bragg part or axis is shown in detail (see also Figs. 1 and 3). The part 1 will be mounted on a mechanism (not shown) that will rotate said part 1 around this axis A of rotation.
     fifteen
    Also shown in Fig. 4 is a beam B of electromagnetic radiation (generally, X-rays) that moves in the figures from left to right. Said beam B, which can be produced, for example, by a particle accelerator, affects the first surface 2 (diffraction plane) and is diffracted by said first surface 2 to influence the second surface 3 (diffraction plane) and be diffracted again by it. In the example of Fig. 4, the beam B strikes the silicon crystal zone 2a of the first surface 2, being diffracted by it, and then strikes the silicon crystal zone 3a of the second surface 3, being diffracted again by it. As will be explained in more detail below, the B beam resulting from this double diffraction is a monochromatic beam that has certain desired characteristics (energy, 25 photon flow, spectral bandwidth) for use in different applications.

    The angle θ that forms the initial beam B with respect to a diffraction plane (Bragg plane, in this case, the first surface 2) when hitting it and being diffracted is called the Bragg angle. The Bragg axis is the A axis around which surface 2 rotates (and part 30 1). In this case, the A axis coincides with the path of the initial B beam and is perpendicular to the initial incident B beam.

    As can be seen, the axis A of rotation is arranged at a distance 1 from the plane P defined by the first surface 2. More specifically, the axis A of rotation is arranged 35
    below the plane P, to one side of the plane P in which the material of the first surface 2 is arranged. The distance 1 can be, for example, from 1 to 5 mm.

    From the above described, it is possible to use the following formula to calculate the displacement of a beam on the first 2: 5 surface

    Δy = l / tan θ

    where Δy is the perpendicular distance from the point of incidence of the initial B beam on the first surface 2 to a perpendicular projection of the A axis on the first surface 2, l is the perpendicular distance of the A axis to the first surface 2 and θ is the Bragg angle.

    In this case, l is positive when the A axis is arranged below the first surface 2 and
    Δy is positive in the L direction, away from the second surface 3.
     fifteen
    Therefore, the position of the point of incidence of the initial beam B on the first surface 2 depends only on the angle θ, which in turn depends on the inclination of the piece 1 when turning around the axis A, since the distance l is fixed. That is, the rotation of the piece 1 around the axis A allows the beam B to be diffracted at points other than surfaces 2 and 3 (in zones 2a and 3a or in zones 2b and 3b). The variation of the angle θ of diffraction of the beam B 20 and of the material in which it is diffracted (silicon crystal or multi-layer material) allows to obtain a monochromatic beam B with specific properties for each angle and material.

    It should be noted that in the described example, surfaces 2 and 3 coincide with the diffraction planes (Bragg planes) of beam B, which are parallel to each other. However, the surfaces 2 and 3 may not coincide with said diffraction planes or be parallel to each other, although, for manufacturing purposes, it is more convenient for surfaces 2 and 3 to be parallel and coincide with the diffraction planes. Likewise, it is not necessary that the axis A coincides with the path of the initial beam B, nor that it is perpendicular with respect to it. 30

    In Figs. 5 to 8 show four specific examples of possible inclinations of part 1 and the corresponding diffraction of beam B for each inclination. Part 1 is based on silicon crystal Si (111) with a deposition of multi-layer material at the outer ends of surfaces 2 and 3 (zones 2b and 3b). 35
    In Fig. 5, the angle θ is 1,366 °, and the beam B affects the zone 2b of multi-layer material of the first surface 2 and then the zone 3b of multi-layer material of the second surface 3. The angles of incidence of the beam on the first and second surfaces 2, 3 are the same, since the surfaces 2, 3 are parallel to each other. With this inclination, the monochromatic beam resulting from diffraction in the two zones 2b, 3b has an energy 5 of 13 keV with a multi-layer material with a period of approximately 2 nm.

    In Fig. 6, the angle θ is 2.22 °, and beam B again affects the zone 2b of multi-layer material of the first surface 2 and zone 3b of multi-layer material of the second surface 3. With this inclination, the monochromatic beam resulting from diffraction in the two two zones 2b, 3b has an energy of 8.8 keV with a multi-layer material with a period of approximately 2 nm.

    In Fig. 7, the angle θ is 7.09 °, and the beam B affects the silicon crystal zone 2a (111) of the first surface 2 and the silicon crystal zone 3a Si (111 ) of the second surface 3. With this inclination, the monochromatic beam resulting from the diffraction in the two zones 2a, 3a has an energy of 16 keV in case the reflection (111) of a silicon crystal is used.

    Finally, in Fig. 8, the angle θ is 41,226 °, and beam B again affects zone 20 2a of silicon crystal Si (111) of the first surface 2 and zone 3a of silicon crystal Si (111) of the second surface 3. With this inclination, the monochromatic beam resulting from diffraction in the two zones 2a, 3a has an energy of 3 keV in case the reflection (111) of a silicon crystal is used.
     25
    Thus, as can be seen, the rotation of the part 1 around the axis A of rotation makes it possible for the beam B of electromagnetic radiation to affect zones 2a and 3a of silicon glass or zones 2b and 3b of material multi-layer in different angles, allowing to obtain a monochromatic beam with different properties.
     30
    Also by way of example, it is possible to make the beam B of electromagnetic radiation impact the two zones 2a and 3a of silicon crystal using a range of angles θ of 5 to 30 degrees, so that the monochromator device of the present invention It acts as a standard monochromator that allows obtaining a monochromatic beam in the range of 5 to 20 keV, with a characteristic spectral bandwidth of this type of monochromator 35
    (ΔE / E ≈ 2 · 10-4). Likewise, it is also possible to make the B beam of electromagnetic radiation impact the two zones 2b and 3b of multi-layer material using an angle range 1 of 1 to 2 degrees, so that the monochromator device of the present invention allows obtaining a monochromatic beam in the approximate range of 7 to 15 keV, which is similar to that obtained by zones 2a and 3a of silicon crystal, although with the multi-layer material, the photon flux of the resulting beam can be 10 100 times higher, although at the expense of a wider spectral bandwidth (ΔE / E ≈ 0.5-2 · 10-2).

    Thus, as can be seen from the above described, the device of the present invention allows to obtain monochromatic electromagnetic radiation beams 10 with a wide variety of characteristics using a single integral piece 1 with a simple and rotating design and structure. around an axis A of rotation arranged below the plane P defined by the first surface 2. The axis A of rotation displaced with respect to the plane P in which the initial beam B for the first time makes it possible to arrange the zones 2a, 2b and 3a 3b made of different materials in the same plane of each corresponding surface 2, 3 15, avoiding having to arrange said areas in planes or in separate pieces.

    This geometric simplicity and the fact of using a single piece 1 allows to facilitate the production of piece 1, reduce the size of the device, reduce or eliminate additional stages or movement mechanisms, facilitate the assembly of the device, obtain a better overall dimensional accuracy , reduce the vibrations produced by the movement of the piece 1 and facilitate the thermal cooling of the piece 1 (beam B heats the piece and it is necessary to cool it), as well as obtaining a thermal uniformity between the two surfaces.

    It would also be possible to modify the characteristics of the materials (for example, the composition and thickness of the layers of the multi-layer material) and the geometry of the piece (dyl distances, size of zones 2a, 2b, 3a, 3b) to obtain monochromatic beams with different properties and expand, for example, the affordable range of energies from 2 keV to 60-70 keV.
    30
    权利要求:
    Claims (3)
    [1]

    1. Monochromator device comprising a rotating element (1) in which a beam (B) of electromagnetic radiation can influence, characterized in that the rotating element comprises a single piece (1) based on a main material that includes a first surface (2) on which the beam (B) can impact and a second surface (3) on which said beam (B) can impact after hitting the first surface (2), each surface comprising (2, 3) a zone (2a, 3a) of main material and a zone (2b, 3b) of multi-layer material disposed adjacently on said surface, and by the fact that the axis (A) of rotation of said piece ( 1) is arranged at a distance (1) of 10 separation from the first surface (2).

    [2]
    2. Monochromator device according to claim 1, characterized in that the first surface (2) and the second surface (3) are parallel to each other.
     fifteen
    [3]
    3. Monochromator device according to claim 1 or 2, characterized in that the multi-layer material comprises alternating superimposed layers of different materials deposited on the first and second surfaces (2, 3) of the piece (1) based in a main and parallel material with respect to a plane defined by the corresponding surface (2, 3). twenty
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    同族专利:
    公开号 | 公开日
    WO2019219990A1|2019-11-21|
    ES2686770B2|2019-03-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    KR20100125049A|2009-05-20|2010-11-30|포항공과대학교 산학협력단|Double multilayer monochromator|
    US20140112452A1|2012-10-19|2014-04-24|Helmholtz-Zentrum Geesthacht Zentrum für Material-und Küstenforschung GmbH|Double-multilayer Monochromator|
    US20160178540A1|2014-02-28|2016-06-23|Sigray, Inc.|X-ray surface analysis and measurement apparatus|
    DE102016101988A1|2016-02-04|2017-08-10|Bundesrepublik Deutschland, Vertreten Durch Den Bundesminister Für Wirtschaft Und Energie, Dieser Vertreten Durch Den Präsidenten Der Bundesanstalt Für Materialforschung Und -Prüfung |X-ray analyzer, apparatus and method for X-ray absorption spectroscopy|
    法律状态:
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    优先权:
    申请号 | 申请日 | 专利标题
    ES201830474A|ES2686770B2|2018-05-18|2018-05-18|MONOCHROME DEVICE|ES201830474A| ES2686770B2|2018-05-18|2018-05-18|MONOCHROME DEVICE|
    PCT/ES2019/070161| WO2019219990A1|2018-05-18|2019-03-11|Monochromising device|
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